THE FORMATION OF SURFACE NANOSTRUCTURES ON As-S-Ge CHALCOGENIDE FILM AFTER E-BEAM EXPOSURE
DOI:
https://doi.org/10.20535/kpi-sn.2020.1.197958Keywords:
Chalcogenide thin films, Electron beam irradiation, Surface nanostructuresAbstract
Background. Chalcogenide glasses comprise a unique materials platform and are attractive in view of various applications that make use their intriguing characteristic, the ability to form surface-relief patterns. The interaction of these materials with the electron beam is of interest due to diversity of physical phenomena induced in chalcogenide films by laser irradiation.
Objective. The purpose of the paper is to study direct (without selective etching) surface relief formation of optical elements periodic nanostructures on thermal vacuum evaporated film As3S77Ge20 of ~8.3 μm thickness using electron beam lithography, as well as investigate the changes in surface nanostructures height and shape depending on exposure.
Methods. The chemical composition was determined by energy dispersive analysis of X-rays. The film was irradiated by an electron beam using a scanning electron microscope. The influence of electron beam irradiation on As3S77Ge20 amorphous chalcogenide thin film was investigated. Surface relief of the film was tapped by atomic force microscope.
Results. The exposure dose G varied from 12 mC·cm-2 to 12 C·cm-2. The formation of cones with Gaussian profile on the surfaces of the films was detected after local electron irradiation. Exposition dependent evolution of height surface nanostructures has been detected. It can be seen that for G < 2400 mC·cm-2 the height of the surface relief gradually grows to 100–125 nm and for G > 2400 mC·cm-2, relief height decreases. The initial and inversion doses of relief formation on this film have found. For 6,6 μm pitch is equal to G0 = 9,60 mC·cm-2, and the inversion dose of the surface relief shape G1= 31.18 C·cm-2. At d = 10 μm, these parameters are G0 = 6,98 mC·cm-2 and G1 = 36.19 C·cm-2. The dependences at increasing interval (16 mC·cm-2 – 1200 mC·cm-2) for d = 6.6 μm and d = 10 μm were fitted by exponential function.
Conclusions. The changing of shape and parameters of the obtained surface relief on As3S77Ge20 film can be explained by the charge model. Our investigations have demonstrated that studied As3S77Ge20 composition is suitable for e-beam recording. These results show that As3S77Ge20 films can be used for fabrication of the optical elements.
References
R. Wang, Amorphous Chalcogenides: Advances and Applications. PanStanford Publishing Pte. Ltd., 2014, 322 p.
A.V. Stronski et al., Chalcogenide Vitreous Semiconductors: Properties and Practical Applications. Nizhyn, Ukraine: NSU, 2016, 236 p.
A.V. Stronski et al., “Fourier Raman spectroscopy studies of the As40S60-xSex glasses”, Semicond. Physics, Quantum Electr. Optoelectron., vol. 4, no. 3, pp. 210–213, 2001. doi: 10.15407/spqeo4.03.210
M.V Sopinskyy et al., “Ellipsometry and AFM study of post-deposition transformation in vacuum-evaporated As-S-Se films”, J. Optoelectron. Adv. Mater., vol. 7, no. 5, pp. 2255–2266, 2005.
V. Kuzma et al., “Study of dependence of electron beam induced surface relief formation on Ge-As-Se thin films on the film elemental composition”, J. Non. Cryst. Solids, vol. 456, pp. 7–11, 2017. doi: doi: 10.1016/j.jnoncrysol.2016.10.033
V. Bilanych et al., “Surface pattering of Ge–As–Se thin films by electric charge accumulation”, Thin Solid Films, vol. 616, pp. 86–94, 2016. doi: 10.1016/j.tsf.2016.07.073
Y. Mizushima and A. Yoshikawa, “Photoprocessing and lithographic applications”, in Amorphous Semiconductors, Technologies and Devices. Tokyo e.a Amsterdam, pp. 277–295, 1982.
R. Klabes et al., “Ion-beam induced silver doping in Ag2Se/GeSe – resist system”, Phys. Stat. Sol. A, vol. 106, no. 1, pp. 57–65, 1988. doi: 10.1002/pssa.2211060108
K. Saito et al., “X-ray lithography with Ag-Se/GeSe inorganic resist using synchrotron radiation”, J. Appl. Phys., vol. 63, pp. 565–567, 1988. doi: 10.1063/1.340087
A. Stronski, “Production of metallic pattern with the help of high resolution inorganic resists”, in Microelectronic Interconnections and Assembly, NATO ASI Series, 3: High Technology, pp. 263–293, 1998. doi: 10.1007/978-94-011-5135-1_31
O. Shylenko et al., “Evaluation of sensitivity of Ge9As9Se82 and Ge16As24Se60 thin films to irradiation with electron beam”, J. Non. Cryst. Solids, vol. 505, pp. 37–42, 2019. doi: 10.1016/j.jnoncrysol.2018.10.042
K. Shportko et al., “Compositional dependencies in the vibrational properties of amorphous Ge-As-Se and Ge-Sb-Te chalcogenide alloys studied by Raman spectroscopy”, Opt. Mater., vol. 73, pp. 489–496, 2017. doi: 10.1016/j.optmat.2017.08.042
L. Revutska et al., “Raman spectroscopy studies of Ge-As-S chalcogenide glasses”, in Proc. 2017 IEEE 7th Int. Conf. Nanomaterials: Applications & Properties, Odesa, Ukraine, 2017. doi: 10.1109/NAP.2017.8190387
M. Kincl and L. Tichy, “Some physical properties of GexAsxS1−2x glasses”, Mater. Chem. Phys., vol. 103, pp. 78–88, 2007. doi: 10.1016/j.matchemphys.2007.01.013
P. Knotek et al., “Nanoimeso-scale separation in some Ge-As-S glasses and amorphous films”, Sci. Pap. Univ. Pardubice, vol. 14, pp. 49–55, 2008.
A. Stronski et al., “Holographic and e-beam image recording in Ge5As37S58–Se nanomultilayer structures”, Nanoscale Res. Lett., vol. 11, no. 39, pp. 1–7, 2016. doi: 10.1186/s11671-016-1235-x
Y. Yang et al., “Composition dependence of physical and optical properties in Ge-As-S chalcogenide glasses”, J. Non. Cryst. Solids, vol. 440, pp. 38–42, 2016. doi: 10.1016/j.jnoncrysol.2016.03.003
S. Soyer-Uzun et al., “Network vs molecular structural characteristics of Ge-doped arsenic sulfide glasses: A combined neutron / X-ray diffraction, extended X-ray absorption fine structure, and Raman spectroscopic study”, J. Phys. Chem. C, vol. 113, no. 15, pp. 6231–6242, 2009. doi: 10.1021/jp810446g
Y.C. Boulmetis et al., “Composition and temperature dependence of the low-frequency Raman scattering in Ge–As–S glasses”, J. Non-Crystalline Solids, vol. 347, no. 1-3, pp. 187–196, 2004. doi: 10.1016/j.jnoncrysol.2004.06.032
S. Mamedov et al., “Evidence for nanoscale phase separation of stressed – rigid glasses”, J. Phys. Condens. Matter, vol. 15, pp. 2397–2411, 2003. doi: 10.1088/0953-8984/15/31/315
D. Arsova et al., “Photoinduced changes in sulphur rich Ge-As-S thin”, J. Optoelectron. Adv. Mater., vol. 11, no. 9, pp. 1253–1256, 2009.
A. Stronski et al., “Optical and electron-beam recording of surface relief’s using Ge5As37S58–Se nanomultilayers as registering media”, J. Nano Res., vol. 39, pp. 96–104, 2016. doi: 10.4028/www.scientific.net/JNanoR.39.96
[A.V. Stronski and M. Vlcek, “Imaging properties of As40S40Se20 layers”, Opto-Electronics Review, vol. 8, no. 3, pp. 263–267, 2000.
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